Chemical bonding of transition metal disilicides

被引:15
作者
Takao, N
Tanaka, I
Adachi, H
机构
[1] Dept. of Mat. Sci. and Engineering, Kyoto University, Sakyo
关键词
silicides; various; ab initio calculations; electronic structures; calculation;
D O I
10.1016/0966-9795(96)00009-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
First-principles molecular orbital calculations of 3d and 4d transition-metal (TM or M) disilicides are conducted using model clusters composed of nearly 20 atoms, with special attention to their chemical bonding. M is positively charged and Si is negatively charged for early TM disilicides; however the direction of charge transfer changes between Fe and Co in the 3d TM disilicides. The net charge of M decreases almost linearly with increasing atomic number except for Sc3Si5 (defective ScSi2). The bond overlap population between M-Si decreases and that between Si-Si increases with rising atomic number of M. The energy distribution of Si 3s and 3p components is found to play an important role in the magnitude of both Si-Si and M-Si bonds. The Si-Si bond strength in Sc3Si5 is exceptionally strong among these disilicides. With regard to net charge and bond overlap population, the results for 4d TM disilicides are qualitatively the same as those for 3d TM disilicides. Copyright (C) 1996 Elsevier Science Ltd
引用
收藏
页码:S113 / S118
页数:6
相关论文
共 8 条
[1]   DISCRETE VARIATIONAL X-ALPHA CLUSTER CALCULATIONS .1. APPLICATION TO METAL CLUSTERS [J].
ADACHI, H ;
TSUKADA, M ;
SATOKO, C .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1978, 45 (03) :875-883
[2]  
ANDERSEN OK, 1995, PHYSICA B, V204, P65, DOI 10.1016/0921-4526(94)00245-Q
[3]   ELECTRONIC PROPERTIES OF SILICON-TRANSITION METAL INTERFACE COMPOUNDS [J].
Calandra, C. ;
Bisi, O. ;
Ottaviani, G. .
SURFACE SCIENCE REPORTS, 1985, 4 (5-6) :271-364
[4]   ELECTRONIC POPULATION ANALYSIS ON LCAO-MO MOLECULAR WAVE FUNCTIONS .1. [J].
MULLIKEN, RS .
JOURNAL OF CHEMICAL PHYSICS, 1955, 23 (10) :1833-1840
[5]  
SAITO J, 1993, P 3 JAP INT SAMPE S, P1252
[6]   PHOTOEMISSION AND INVERSE PHOTOEMISSION OF TRANSITION-METAL SILICIDES [J].
SPEIER, W ;
VONLEUKEN, E ;
FUGGLE, JC ;
SARMA, DD ;
KUMAR, L ;
DAUTH, B ;
BUSCHOW, KHJ .
PHYSICAL REVIEW B, 1989, 39 (09) :6008-6016
[7]   X-RAY-EMISSION STUDIES OF CHEMICAL BONDING IN TRANSITION-METAL SILICIDES [J].
WEIJS, PJW ;
VANLEUKEN, H ;
DEGROOT, RA ;
FUGGLE, JC ;
REITER, S ;
WIECH, G ;
BUSCHOW, KHJ .
PHYSICAL REVIEW B, 1991, 44 (15) :8195-8203
[8]   ATOMIC SUBSHELL PHOTOIONIZATION CROSS-SECTIONS AND ASYMMETRY PARAMETERS - 1 LESS-THAN-OR-EQUAL-TO Z LESS-THAN-OR-EQUAL-TO 103 [J].
YEH, JJ ;
LINDAU, I .
ATOMIC DATA AND NUCLEAR DATA TABLES, 1985, 32 (01) :1-155