PHOTOEMISSION AND INVERSE PHOTOEMISSION OF TRANSITION-METAL SILICIDES

被引:88
作者
SPEIER, W
VONLEUKEN, E
FUGGLE, JC
SARMA, DD
KUMAR, L
DAUTH, B
BUSCHOW, KHJ
机构
[1] PHILIPS RES LABS, NAT KUNDIG LAB, 5600 JA EINDHOVEN, NETHERLANDS
[2] CATHOLIC UNIV NIJMEGEN, MAT RES INST, 6525 ED NIJMEGEN, NETHERLANDS
来源
PHYSICAL REVIEW B | 1989年 / 39卷 / 09期
关键词
D O I
10.1103/PhysRevB.39.6008
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:6008 / 6016
页数:9
相关论文
共 35 条
[1]   INVERSE PHOTOEMISSION-STUDY OF NICKEL SILICIDES [J].
AZIZAN, M ;
BAPTIST, R ;
CHAUVET, G ;
TAN, TAN .
SOLID STATE COMMUNICATIONS, 1986, 57 (01) :1-3
[2]  
BEILLE J, 1975, J PHYS-PARIS, V38, P2197
[3]  
BEYREUTHER C, 1974, PHYS FENN, V9, P1
[4]   COMPARISON OF FULLY RELATIVISTIC ENERGY-BANDS AND COHESIVE ENERGIES OF MOSI2 AND WSI2 [J].
BHATTACHARYYA, BK ;
BYLANDER, DM ;
KLEINMAN, L .
PHYSICAL REVIEW B, 1985, 32 (12) :7973-7978
[5]   TRANSITION-METAL SILICIDES - ASPECTS OF THE CHEMICAL-BOND AND TRENDS IN THE ELECTRONIC-STRUCTURE [J].
BISI, O ;
CALANDRA, C .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (35) :5479-5494
[6]   CORRELATION-EFFECTS IN VALENCE-BAND SPECTRA OF NICKEL SILICIDES [J].
BISI, O ;
CALANDRA, C ;
DELPENNINO, U ;
SASSAROLI, P ;
VALERI, S .
PHYSICAL REVIEW B, 1984, 30 (10) :5696-5703
[7]   ELECTRONIC-STRUCTURE OF VANADIUM SILICIDES [J].
BISI, O ;
CHIAO, LW .
PHYSICAL REVIEW B, 1982, 25 (08) :4943-4948
[8]   DEHAAS-VANALPHEN EFFECT AND LMTO BANDSTRUCTURE OF NISI [J].
BOULET, RM ;
DUNSWORTH, AE ;
JAN, JP ;
SKRIVER, HL .
JOURNAL OF PHYSICS F-METAL PHYSICS, 1980, 10 (10) :2197-2206
[9]   WORK FUNCTION AND BARRIER HEIGHTS OF TRANSITION-METAL SILICIDES [J].
BUCHER, E ;
SCHULZ, S ;
LUXSTEINER, MC ;
MUNZ, P ;
GUBLER, U ;
GREUTER, F .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 40 (02) :71-77
[10]   IMPORTANCE OF COULOMB CORRELATION IN SILICIDE SPECTRA [J].
CALANDRA, C ;
BISI, O ;
DELPENNINO, U ;
VALERI, S ;
XI, Y .
SURFACE SCIENCE, 1986, 168 (1-3) :164-170