The growth of high quality GaMnAs films by MBE

被引：19

作者：

Foxon, CT ^{[1
]}

Campion, RP ^{[1
]}

Edmonds, KW ^{[1
]}

Zhao, L ^{[1
]}

Wang, K ^{[1
]}

Farley, NRS ^{[1
]}

Staddon, CR ^{[1
]}

Gallagher, BL ^{[1
]}

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2004年 / 15卷 / 11期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1023/B:JMSE.0000043420.48864.07

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using As-2 as an arsenic source together with other appropriate growth and annealing procedures, we have improved the electrical and magnetic properties of GaMnAs films and obtained Curie temperatures as high as 159 K. For Mn concentrations up to 7%, we have demonstrated that the compensation previously observed in such films is mainly due to Mn interstitials, which can be removed by using appropriate annealing procedures for thin films. For the Mn concentrations > 7%, we suggest that additional As-Ga defects also cause compensation, which cannot be removed by our present annealing procedure. (C) 2004 Kluwer Academic Publishers.

引用

页码：727 / 731

页数：5

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