A low-temperature-grown oxide diode as a new switch element for high-density, nonvolatile memories

被引：220

作者：

Lee, Myoung-Jae ^{[1
]}

Seo, Sunae

Kim, Dong-Chirl

Ahn, Seung-Eon

Seo, David H.

Yoo, In-Kyeong

Baek, In-Gyu

Kim, Dong-Sik

Byun, Ik-Su

Kim, Soo-Hong

Hwang, In-Rok

Kim, Jin-Soo

Jeon, Sang-Ho

Park, Bae Ho

机构：

[1] Samsung Adv Inst Technol, Nano Devices Lab, Suwon 440600, South Korea

[2] Konkuk Univ, Dept Phys, Seoul 143701, South Korea

[3] Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Suwon 440600, South Korea

[4] Inha Tech Coll, Dept Syst & Comp Engn, Inchon 402753, South Korea

来源：

ADVANCED MATERIALS | 2007年 / 19卷 / 01期

关键词：

D O I：

10.1002/adma.200601025

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A one-diode/one-resistor structure, Pt/NiO/Pt/p-NiOx/n-TiOx/Pt, has been fabricated. This novel structure exhibits bistable resistance switching under forward bias, while the diode suppresses resistance switching in the Pt/NiO/Pt memory cell under reverse bias (see figure). Its low processing temperature and small cell size, as well as excellent rectifying characteristics, make this Pt/p-NiOx/n-TiOx/Pt diode structure a promising switch element for high-density, nonvolatile memory devices with 3D stack and cross-point structures.

引用

页码：73 / +

页数：5

共 15 条

[11] Electrode dependence of resistance switching in polycrystalline NiO films
Seo, S
Lee, MJ
Kim, DC
Ahn, SE
Park, BH
Kim, YS
Yoo, IK
Byun, IS
Hwang, IR
Kim, SH
Kim, JS
Choi, JS
Lee, JH
Jeon, SH
Hong, SH
Park, BH
[J]. APPLIED PHYSICS LETTERS, 2005, 87 (26) : 1 - 3
[12] Conductivity switching characteristics and reset currents in NiO films
Seo, S
Lee, MJ
Seo, DH
Choi, SK
Suh, DS
Joung, YS
Yoo, IK
Byun, IS
Hwang, IR
Kim, SH
Park, BH
[J]. APPLIED PHYSICS LETTERS, 2005, 86 (09) : 1 - 3
[13] Reproducible resistance switching in polycrystalline NiO films
Seo, S
Lee, MJ
Seo, DH
Jeoung, EJ
Suh, DS
Joung, YS
Yoo, IK
Hwang, IR
Kim, SH
Byun, IS
Kim, JS
Choi, JS
Park, BH
[J]. APPLIED PHYSICS LETTERS, 2004, 85 (23) : 5655 - 5657
[14] Direct observation of charge order in an epitaxial NdNiO3 film -: art. no. 126402
Staub, U
Meijer, GI
Fauth, F
Allenspach, R
Bednorz, JG
Karpinski, J
Kazakov, SM
Paolasini, L
d'Acapito, F
[J]. PHYSICAL REVIEW LETTERS, 2002, 88 (12) : 4
[15] Surdeanu R, 2002, ELEC SOC S, V2002, P413

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