Wide-bandgap Zn2GeO4 nanowire networks as efficient ultraviolet photodetectors with fast response and recovery time

被引：177

作者：

Yan, Chaoyi ^{[1
]}

Singh, Nandan ^{[1
]}

Lee, Pooi See ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 05期

关键词：

adsorption; chromium; desorption; gold; metal-semiconductor-metal structures; nanosensors; nanowires; optical modulation; photodetectors; ultraviolet detectors; wide band gap semiconductors; zinc compounds; BUILDING-BLOCKS; OXIDE NANOWIRES; TRANSPORT; DEVICES; UV;

D O I：

10.1063/1.3297905

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultraviolet (UV) photodetectors based on ternary Zn2GeO4 nanowire (NW) networks are demonstrated. The devices show fast response and recovery time, which is attributed to the unique NW-NW junction barrier dominated conductance for network devices. The UV-light induced barrier height modulation is much faster than the oxygen adsorption/desorption processes. The wide-band gap Zn2GeO4 NWs also exhibit high wavelength selectivity for deep UV detection. We demonstrate that ternary oxide NW-networks are ideal building blocks for nanoscale photodetectors with superior performance and facile fabrication processes.

引用

页数：3

共 19 条

[1] Medium-scale carbon nanotube thin-film integrated circuits on flexible plastic substrates [J].

Cao, Qing ;

Kim, Hoon-sik ;

Pimparkar, Ninad ;

Kulkarni, Jaydeep P. ;

Wang, Congjun ;

Shim, Moonsub ;

Roy, Kaushik ;

Alam, Muhammad A. ;

Rogers, John A. .

NATURE, 2008, 454 (7203) :495-U4

[2] Functional nanoscale electronic devices assembled using silicon nanowire building blocks [J].

Cui, Y ;

Lieber, CM .

SCIENCE, 2001, 291 (5505) :851-853

[3] Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices [J].

Duan, XF ;

Huang, Y ;

Cui, Y ;

Wang, JF ;

Lieber, CM .

NATURE, 2001, 409 (6816) :66-69

[4] ZnO-based ternary compound nanotubes and nanowires [J].

Fan, Hong Jin ;

Yang, Yang ;

Zacharias, Margit .

JOURNAL OF MATERIALS CHEMISTRY, 2009, 19 (07) :885-900

[5] Single-Crystalline ZnS Nanobelts as Ultraviolet-Light Sensors [J].

Fang, Xiaosheng ;

Bando, Yoshio ;

Liao, Meiyong ;

Gautam, Ujjal K. ;

Zhi, Chunyi ;

Dierre, Benjamin ;

Liu, Baodan ;

Zhai, Tianyou ;

Sekiguchi, Takashi ;

Koide, Yasuo ;

Golberg, Dmitri .

ADVANCED MATERIALS, 2009, 21 (20) :2034-2039

[6] Photocurrent characteristics of individual ZnGa2O4 nanowires [J].

Feng, P. ;

Zhang, J. Y. ;

Wan, Q. ;

Wang, T. H. .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (07)

[7] Photoconduction studies on GaN nanowire transistors under UV and polarized UV illumination [J].

Han, S ;

Jin, W ;

Zhang, DH ;

Tang, T ;

Li, C ;

Liu, XL ;

Liu, ZQ ;

Lei, B ;

Zhou, CW .

CHEMICAL PHYSICS LETTERS, 2004, 389 (1-3) :176-180

[8] Degradation of benzene over a zinc germanate photocatalyst under ambient conditions [J].

Huang, Jianhui ;

Wang, Xinchen ;

Hou, Yidong ;

Chen, Xiufang ;

Wu, Ling ;

Fu, Xianzhi .

ENVIRONMENTAL SCIENCE & TECHNOLOGY, 2008, 42 (19) :7387-7391

[9] Growth of ternary oxide nanowires by gold-catalyzed vapor-phase evaporation [J].

Jie, JS ;

Wang, GZ ;

Han, XH ;

Fang, JP ;

Yu, QX ;

Liao, Y ;

Xu, B ;

Wang, QT ;

Hou, JG .

JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (24) :8249-8253

[10]

Kind H, 2002, ADV MATER, V14, P158, DOI 10.1002/1521-4095(20020116)14:2<158::AID-ADMA158>3.0.CO

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