Spatial correlations across n(+)n semiconductor junctions

An analytical model for the spatial correlations and noise across an abrupt n(+) n junction is presented. The model is able to treat the junction as a whole in strongly inhomogeneous conditions self-consistently, by taking into account both the drift and diffusion contributions to the current. It is shown that within the analytical approach, the voltage noise across the junction can be decomposed into the sample and the contact contributions and the term representing sample-contact cross correlation. It is argued that the proposed analytical method is quite universal and could be effectively applied to different devices, operating under strongly inhomogeneous distributions of the electric field and charge concentration. (C) 1997 American Institute of Physics.