Hydrodynamic and Monte Carlo simulation of steady-state transport and noise in submicrometre n(+)nn(+) silicon structures

A hydrodynamic approach based on velocity and energy conservation equations is developed and used for the simultaneous evaluation of the electronic steady-state transport, small-signal response and noise in an n(+)nn(+) Si structure. An original decomposition of velocity and energy profiles along the structure in terms of field, convective and diffusion contributions is presented. The local distribution of the noise source and voltage spectral density is carried out within the transfer-impedance method. The excellent agreement of the approach thus developed with Monte Carlo simulations supports its physical reliability and effectiveness for submicron-device modelling.