PHYSICS-BASED ELECTRON DEVICE MODELING AND COMPUTER-AIDED MMIC DESIGN

被引:30
作者
FILICORI, F
GHIONE, G
NALDI, CU
机构
[1] POLITECN TORINO, DIPARTIMENTO ELETTR, I-10128 TURIN, ITALY
[2] FAC INGN BOLOGNA, CTR STUDIO INTERAZ OPERATORE, I-40136 BOLOGNA, ITALY
关键词
D O I
10.1109/22.146317
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The paper provides an overview on the state of the art and future trends in physics-based electron device modelling for the computer-aided design of monolithic microwave IC's. After a review of the main physics-based approaches to microwave modelling, special emphasis is placed on innovative developments relevant to circuit-oriented device performance assessment, such as efficient physics-based noise and parametric sensitivity analysis. The use of state-of-the-art physics-based analytical or numerical models for circuit analysis is discussed, with particular attention to the role of intermediate behavioural models in linking multidimensional device simulators with circuit analysis tools. Finally, the model requirements for yield-driven MMIC design are discussed, with the aim of pointing out the advantages of physics-based statistical device modelling; the possible use of computationally efficient approaches based on device sensitivity analysis for yield optimization is also considered.
引用
收藏
页码:1333 / 1352
页数:20
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