A PROCESS AND DEVICE MODEL FOR GAAS-MESFET TECHNOLOGY - GATES

被引：8

作者：

ANHOLT, R ^{[1
]}

SIGMON, TW ^{[1
]}

机构：

[1] STANFORD UNIV, SOLID STATE ELECTR LAB, STANFORD, CA 94305 USA

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1989年 / 8卷 / 04期

关键词：

D O I：

10.1109/43.29589

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：350 / 359

页数：10

共 59 条

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[4]

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[5]

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