Characterization of Ni-implanted GaN and SiC

被引：5

作者：

Pearton, SJ

Theodoropoulou, N

Overberg, ME

Abernathy, CR

Hebard, AF

Chu, SNG

Wilson, RG

Zavada, JM

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Phys, Gainesville, FL 32611 USA

[3] Agere Syst, Murray Hill, NJ 07974 USA

[4] USA, Res Off, Res Triangle Pk, NC 27709 USA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 94卷 / 2-3期

关键词：

magnetic ions; ferromagnetism; Ni;

D O I：

10.1016/S0921-5107(02)00056-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High concentrations (> 10(21) cm(-3)) of Ni were introduced into GaN and SiC by ion implantation at 350 degreesC. On subsequent annealing at 700 degreesC, there was more residual lattice damage in GaN compared to SiC. Both materials showed ferromagnetism with transition temperatures below 50 K. No secondary phases could be detected by transmission electron microscopy (TEM) or selected area diffraction in either GaN or SiC. The direct implantation process appears useful for studying ion/substrate combinations for potential spintronic applications. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：159 / 163

页数：5

共 19 条

[1] Growth and characterization of low-temperature grown GaN with high Fe doping [J].