Effect of nucleation on the crystalline structure of nanowhiskers

被引:9
作者
Dubrovskii, V. G. [1 ]
Sibirev, N. V. [2 ]
机构
[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] Russian Acad Sci, St Petersburg Ctr Res & Educ Phys & Technol, St Petersburg 194021, Russia
基金
俄罗斯基础研究基金会;
关键词
GROWTH-RATE; WHISKERS;
D O I
10.1134/S1063785009040282
中图分类号
O59 [应用物理学];
学科分类号
摘要
An exactly solvable model of nucleation during the growth of nanowhiskers has been constructed. Activation barriers for the formation of nuclei in various positions are determined as dependent on the chemical potentials and surface energies. It is shown that the nucleation at the triple contact line is energetically favorable. In a broad range of system parameters, the formation of a hexagonal vurtzite-like crystalline phase takes place (particularly for GaAs nanowhiskers growing on an GaAs(111)B substrate surface activated by gold drops). Dependences of the probability of the hexagonal phase formation on the degree of supersaturation in the liquid catalyst and the NW radius are determined.
引用
收藏
页码:380 / 383
页数:4
相关论文
共 16 条
[1]   Growth thermodynamics of nanowires and its application to polytypism of zinc blende III-V nanowires [J].
Dubrovskii, V. G. ;
Sibirev, N. V. .
PHYSICAL REVIEW B, 2008, 77 (03)
[2]   General form of the dependences of nanowire growth rate on the nanowire radius [J].
Dubrovskii, V. G. ;
Sibirev, N. V. .
JOURNAL OF CRYSTAL GROWTH, 2007, 304 (02) :504-513
[3]   Growth kinetics and crystal structure of semiconductor nanowires [J].
Dubrovskii, V. G. ;
Sibirev, N. V. ;
Harmand, J. C. ;
Glas, F. .
PHYSICAL REVIEW B, 2008, 78 (23)
[4]   Growth of GaAs nanoscale whiskers by magnetron sputtering deposition [J].
Dubrovskii, VG ;
Soshnikov, IP ;
Sibirev, NV ;
Cirlin, GE ;
Ustinov, VM .
JOURNAL OF CRYSTAL GROWTH, 2006, 289 (01) :31-36
[5]   Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment [J].
Dubrovskii, VG ;
Cirlin, GE ;
Soshnikov, IP ;
Tonkikh, AA ;
Sibirev, NV ;
Samsonenko, YB ;
Ustinov, VM .
PHYSICAL REVIEW B, 2005, 71 (20)
[6]   Kinetic model of the growth of nanodimensional whiskers by the vapor-liquid-crystal mechanism [J].
Dubrovskii, VG ;
Sibirev, NV ;
Cirlin, GE .
TECHNICAL PHYSICS LETTERS, 2004, 30 (08) :682-686
[7]   Diameter-dependent growth rate of InAs nanowires [J].
Froberg, L. E. ;
Seifert, W. ;
Johansson, J. .
PHYSICAL REVIEW B, 2007, 76 (15)
[8]   Why does wurtzite form in nanowires of III-V zinc blende semiconductors? [J].
Glas, Frank ;
Harmand, Jean-Christophe ;
Patriarche, Gilles .
PHYSICAL REVIEW LETTERS, 2007, 99 (14)
[9]   Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth -: art. no. 203101 [J].
Harmand, JC ;
Patriarche, G ;
Péré-Laperne, N ;
Mérat-Combes, MN ;
Travers, L ;
Glas, F .
APPLIED PHYSICS LETTERS, 2005, 87 (20) :1-3
[10]   Structural properties of (111)B-oriented III-V nanowires [J].
Johansson, J ;
Karlsson, LS ;
Svensson, CPT ;
Martensson, T ;
Wacaser, BA ;
Deppert, K ;
Samuelson, L ;
Seifert, W .
NATURE MATERIALS, 2006, 5 (07) :574-580