Epitaxial growth of Pt(001) thin films on Si substrates using an epitaxial γ-Al2O3(001) buffer layer

被引：19

作者：

Akai, D ^{[1
]}

Hirabayashi, K ^{[1
]}

Yokawa, M ^{[1
]}

Sawada, K ^{[1
]}

Ishida, M ^{[1
]}

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 264卷 / 1-3期

关键词：

deposition; RF sputter; platinum; gamma-Al2O3;

D O I：

10.1016/j.jcrysgro.2003.12.048

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

For the first time, an epitaxial Pt(0 0 1) thin film has been grown successfully on a Si(0 0 1) substrate using an epitaxial gamma-Al2O3(0 0 1) buffer layer. The epitaxial gamma-Al2O3(0 0 1) buffer layers on Si substrates were prepared by chemical vapor deposition using trimethyl aluminum and O-2 gas. The epitaxial Pt(0 0 1) films were deposited on the epitaxial Al2O3(0 0 1) layer using RF sputtering at a low deposition rate (similar to 0.7 nm/min), at a substrate temperature of 600degreesC. This could enable the deposition of (0 0 1) oriented ferroelectric films on the Pt(0 0 1). (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：463 / 467

页数：5

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