Fabrication of the Si/Al2O3/SiO2/Si structure using O2 annealed Al2O3/Si structure

被引：10

作者：

Ishida, M ^{[1
]}

Hori, H ^{[1
]}

Kondo, F ^{[1
]}

Akai, D ^{[1
]}

Sawada, K ^{[1
]}

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 4B期

关键词：

SOI; heteroepitaxial growth; epitaxial Al2O3; formation of SiO2; UHV-CVD; MOSFET;

D O I：

10.1143/JJAP.39.2078

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation of a SiO2 layer in the interface between epitaxial Al2O3(100) and a Si(100) substrate, in order to improve the insulation, was studied using O-2 annealing at 1000 degrees C, and the Al2O3(100)/SiO2/Si(100) structure was proposed as a Si-on- insulator (SOI) substrate. The breakdown voltage property of Al2O3/SiO2/Si, rather than that of the Al2O3/Si structure, was improved from 8 V to 50 V. Moreover, Si(100) growth on the Al2O3/SiO2/Si structure was carried out, and the morphology of the Si top layer was very smooth. Metal-oxide-semiconductor field effect transistors (MOSFETs) on the substrates show excellent electrical properties, which indicates the high crystallinity of SOI.

引用

页码：2078 / 2082

页数：5

共 9 条

[1] Band structure, deformation potentals, and carrier mobility in strained Si, Ge, and SiGe alloys [J].

Fischetti, MV ;

Laux, SE .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (04) :2234-2252

[2] HETEROEPITAXIAL SI/AL2O3/SI STRUCTURES [J].

ISHIDA, M ;

SAWADA, K ;

YAMAGUCHI, S ;

NAKAMURA, T ;

SUZAKI, T .

APPLIED PHYSICS LETTERS, 1989, 55 (06) :556-558

[3] DOUBLE SOI STRUCTURES AND DEVICE APPLICATIONS WITH HETEROEPITAXIAL AL2O3 AND SI [J].

ISHIDA, M ;

LEE, YT ;

HIGASHINO, T ;

SEO, H ;

NAKAMURA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (2B) :831-835

[4] Formation of very thin epitaxial Al2O3 pre-layer with very smooth surface on Si (111) using a protective oxide layer [J].

Jung, YC ;

Miura, H ;

Ishida, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4B) :2333-2336

[5] High-quality silicon/insulator heteroepitaxial structures formed by molecular beam epitaxy using Al2O3 and Si [J].

Jung, YC ;

Miura, H ;

Ohtani, K ;

Ishida, M .

JOURNAL OF CRYSTAL GROWTH, 1999, 196 (01) :88-96

[6] Epitaxial Si on Al2O3 films grown with O2 gas by the ultrahigh-vacuum chemical vapor deposition method [J].

Kimura, T ;

Yaginuma, H ;

Sengoku, A ;

Moriyasu, Y ;

Ishida, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (3B) :1285-1288

[7] Fabrication of Si/Al2O3/Si silicon on insulator structures grown by ultrahigh-vacuum CVD method [J].

Kimura, T ;

Sengoku, A ;

Ishida, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B) :1001-1004

[8] The effect of oxidation source gas on epitaxial Al2O3 films on Si [J].

Kimura, T ;

Sengoku, A ;

Yaginuma, H ;

Moriyasu, Y ;

Ishida, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (12A) :7126-7132

[9] Development of surface morphology of epitaxial Al2O3 on silicon by controlling reaction between oxygen and silicon surface [J].

Kimura, T ;

Ishida, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (2A) :853-856

← 1 →