The effect of oxidation source gas on epitaxial Al2O3 films on Si

被引：11

作者：

Kimura, T ^{[1
]}

Sengoku, A ^{[1
]}

Yaginuma, H ^{[1
]}

Moriyasu, Y ^{[1
]}

Ishida, M ^{[1
]}

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 441, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 12A期

关键词：

SOI; heteroepitaxial growth; epitaxial Al2O3; UHV-CVD; O-2;

D O I：

10.1143/JJAP.36.7126

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial growth of Al2O3 On Si has been investigated by using ultrahigh-vacuum chemical vapor deposition (UHV-CVD). Film thickness uniformity in a wafer was progressed by UHV-CVD method with a hot wall heating system, but the film surface morphology of grown films was worse than that grown by low-pressure chemical vapor deposition (LP-CVD) with a cold wall heating system. Reaction between Si surface and N2O was carried out by LP-CVD and UHV-CVD, and it is supposed that N2O gas etches the Si surface rather than O-2 gas at the initial growth stage in UHV-CVD. High crystalline quality of Al2O3 films was obtained at 1000 degrees C by changing the oxidation source gas from N2O to O-2. Al2O3 film crystalline quality and electrical property were improved by using O-2 gas.

引用

页码：7126 / 7132

页数：7

共 16 条

[1]

IHARA M, 1982, J ELECTROCHEM SOC, V129, P2596

[2] EPITAXIAL AL2O3 FILMS ON SI BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].

ISHIDA, M ;

KATAKABE, I ;

NAKAMURA, T ;

OHTAKE, N .

APPLIED PHYSICS LETTERS, 1988, 52 (16) :1326-1328

[3] EPITAXIALLY STACKED STRUCTURES OF SI/AL2O3/SI FOR SENSOR MATERIALS [J].

ISHIDA, M ;

ASHIKI, M ;

SAWADA, K ;

YAMAGUCHI, S ;

NAKAMURA, T .

SENSORS AND ACTUATORS A-PHYSICAL, 1990, 21 (1-3) :267-270

[4] HETEROEPITAXIAL SI/AL2O3/SI STRUCTURES [J].

ISHIDA, M ;

SAWADA, K ;

YAMAGUCHI, S ;

NAKAMURA, T ;

SUZAKI, T .

APPLIED PHYSICS LETTERS, 1989, 55 (06) :556-558

[5] DOUBLE SOI STRUCTURES AND DEVICE APPLICATIONS WITH HETEROEPITAXIAL AL2O3 AND SI [J].

ISHIDA, M ;

LEE, YT ;

HIGASHINO, T ;

SEO, H ;

NAKAMURA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (2B) :831-835

[6] SILICON INSULATOR HETERO-EPITAXIAL STRUCTURES FORMED BY VACUUM DEPOSITION OF CAF2 AND SI [J].

ISHIWARA, H ;

ASANO, T .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :66-68

[7] THE ORIGIN OF DEFECTS IN SIO2 THERMALLY GROWN ON CZOCHRALSKI SILICON SUBSTRATES [J].

ITSUMI, M ;

TOMITA, M ;

YAMAWAKI, M .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (03) :1940-1943

[8] THE COMPOSITION OF OCTAHEDRON STRUCTURES THAT ACT AS AN ORIGIN OF DEFECTS IN THERMAL SIO2 ON CZOCHRALSKI SILICON [J].

ITSUMI, M ;

AKIYA, H ;

UEKI, T ;

TOMITA, M ;

YAMAWAKI, M .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (10) :5984-5988

[9] Octahedral-structured gigantic precipitates as the origin of gate-oxide defects in metal-oxide-semiconductor large-scale-integrated circuits [J].

Itsumi, M ;

Akiya, H ;

Ueki, T ;

Tomita, M ;

Yamawaki, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B) :812-817

[10]

*JANAF, 1974, JANAF JOINT ARM NAV

← 1 2 →