Near room temperature electrical injection lasing for dilute nitride Ga(NAsP)/GaP quantum-well structures grown by metal organic vapour phase epitaxy

被引：42

作者：

Kunert, B. ^{[1
]}

Klehr, A.

Reinhard, S.

Volz, K.

Stolz, W.

机构：

[1] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany

[2] Univ Marburg, Fac Phys, D-35032 Marburg, Germany

[3] Ferdinand Braun Inst Hochstfrequenztech, D-12489 Berlin, Germany

来源：

ELECTRONICS LETTERS | 2006年 / 42卷 / 10期

关键词：

Semiconducting gallium compounds;

D O I：

10.1049/el:20060295

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical injection lasing has been verified for GaP-based broad-area Ga(NAsP)/GaP single-quantum-well heterostructures near room temperature for the first time. The lasers have been grown by metal organic vapour phase epitaxy. Owing to the comparable lattice constants of this novel material system to that of Si, this novel dilute nitride III/V laser material might be applied for optoelectronic devices integrated to Si microelectronics in the future.

引用

页码：601 / 603

页数：3

共 5 条

[1] GAAS ON SI AND RELATED SYSTEMS - PROBLEMS AND PROSPECTS [J].