GAAS ON SI AND RELATED SYSTEMS - PROBLEMS AND PROSPECTS

被引：102

作者：

KROEMER, H ^{[1
]}

LIU, TY ^{[1
]}

PETROFF, PM ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90359-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：96 / 102

页数：7

共 26 条

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[9] GAAS BIPOLAR-TRANSISTORS GROWN ON (100) SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
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[10] ELIMINATION OF INTERFACE DEFECTS IN MISMATCHED EPILAYERS BY A REDUCTION IN GROWTH AREA
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AST, DG
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (18) : 1496 - 1498

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