Impedance analysis of a radio-frequency single-electron transistor

被引：27

作者：

Cheong, HD

Fujisawa, T

Hayashi, T

Hirayama, Y

Jeong, YH

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[2] Pohang Univ Sci & Technol, Dept Elect & Elect Engn, Pohang, Kyungpook, South Korea

[3] CREST, Kawaguchi 3310012, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 17期

关键词：

D O I：

10.1063/1.1515883

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate rf transport through an AlGaAs/GaAs single-electron transistor (SET). The presented rf-SET scheme provides a transmission coefficient proportional to the admittance of the device, which is desirable for impedance analysis as well as for high-sensitivity charge detection. The impedance of a SET, including the small tunneling capacitance, is successfully analyzed at the high frequency of 643 MHz, and is compared with a simple model. The ability to measure the impedance of a SET would expand the measurable regime of single-electron tunneling behavior. (C) 2002 American Institute of Physics.

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页码：3257 / 3259

页数：3

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