Saturation measurements of electrically detected magnetic resonance in hydrogenated amorphous silicon based thin-film transistors

被引:23
作者
Kawachi, G [1 ]
Graeff, CFO [1 ]
Brandt, MS [1 ]
Stutzmann, M [1 ]
机构
[1] TECH UNIV MUNICH,WALTER SCHOTTKY INST,D-85748 GARCHING,GERMANY
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 1A期
关键词
electrically detected magnetic resonance; hydrogenated amorphous silicon; thin-film transistors; a-Si:H TFTs; microstrip resonator;
D O I
10.1143/JJAP.36.121
中图分类号
O59 [应用物理学];
学科分类号
摘要
The saturational broadening of an electrically detected magnetic resonance signal in hydrogenated amorphous silicon has been observed in thin-film transistor structures. It was found that broadening of the resonance spectrum with increasing microwave power is caused by an enhanced local microwave field in the transistor due to strong coupling of the microwave field with the microstrip-like structure of the transistor. The held enhancement factor, which was estimated from saturation measurements, can reach 33 in a transistor with a channel width-to-length ratio of 500/10, demonstrating that the thin-film resonator is an effective tool for improving the detection sensitivity.
引用
收藏
页码:121 / 125
页数:5
相关论文
共 16 条
  • [1] ELECTRON-SPIN-RESONANCE AND ENDOR APPLICATIONS OF LOOP GAP RESONATORS WITH DISTRIBUTED CIRCUIT COUPLING
    ANDERSON, JR
    VENTERS, RA
    BOWMAN, MK
    TRUE, AE
    HOFFMAN, BM
    [J]. JOURNAL OF MAGNETIC RESONANCE, 1985, 65 (01) : 165 - 168
  • [2] RECOMBINATION PROCESSES IN A-SI-H - SPIN-DEPENDENT PHOTOCONDUCTIVITY
    DERSCH, H
    SCHWEITZER, L
    STUKE, J
    [J]. PHYSICAL REVIEW B, 1983, 28 (08): : 4678 - 4684
  • [3] GARDIOL F, 1994, MICROSTRIP CIRCUITS, P43
  • [4] SPIN-SPIN SCATTERING IN A SILICON 2-DIMENSIONAL ELECTRON-GAS
    GHOSH, RN
    SILSBEE, RH
    [J]. PHYSICAL REVIEW B, 1992, 46 (19): : 12508 - 12525
  • [5] SPIN-DEPENDENT PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-GERMANIUM AND SILICON-GERMANIUM ALLOYS
    GRAEFF, CFO
    STUTZMANN, M
    BRANDT, MS
    [J]. PHYSICAL REVIEW B, 1994, 49 (16): : 11028 - 11034
  • [6] Spin-dependent transport in amorphous silicon thin-film transistors
    Graeff, CFO
    Kawachi, G
    Brandt, MS
    Stutzmann, M
    Powell, MJ
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 198 : 1117 - 1120
  • [7] DEFECT CREATION IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS
    GRAEFF, CFO
    BRANDT, MS
    STUTZMANN, M
    POWELL, MJ
    [J]. PHYSICAL REVIEW B, 1995, 52 (07): : 4680 - 4683
  • [8] HASEGAWA S, 1978, THIN SOLID FILMS, V55, P15, DOI 10.1016/0040-6090(78)90068-8
  • [9] A NOVEL TECHNOLOGY FOR A-SI TFT-LCDS WITH BURIED ITO ELECTRODE STRUCTURE
    KAWACHI, G
    KIMURA, E
    WAKUI, Y
    KONISHI, N
    YAMAMOTO, H
    MATSUKAWA, Y
    SASANO, A
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (07) : 1120 - 1124
  • [10] Carrier transport in amorphous silicon-based thin-film transistors studied by spin-dependent transport
    Kawachi, G
    Graeff, CFO
    Brandt, MS
    Stutzmann, M
    [J]. PHYSICAL REVIEW B, 1996, 54 (11): : 7957 - 7964