Origin of forward leakage current in GaN-based light-emitting devices

被引：143

作者：

Lee, S. W. ^{[1
]}

Oh, D. C.

Goto, H.

Ha, J. S.

Lee, H. J.

Hanada, T.

Cho, M. W.

Yao, T.

Hong, S. K.

Lee, H. Y.

Cho, S. R.

Choi, J. W.

Choi, J. H.

Jang, J. H.

Shin, J. E.

Lee, J. S.

机构：

[1] Tohoku Univ, Interdisciplinary Res Ctr, Aoba Ku, Sendai, Miyagi 9808578, Japan

[2] Chungnam Natl Univ, Dept Mat Sci & Engn, Taejon 305764, South Korea

[3] Chonnam Natl Univ, Fac Appl Chem Engn, Kwangju 500757, South Korea

[4] LG Elect Inst Technol, LED, R&D Lab, Seoul 137724, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 13期

关键词：

D O I：

10.1063/1.2357930

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors fabricated GaN-based light-emitting diodes (LEDs) on two different GaN templates with the same LED structure. One on thin GaN template (similar to 2 mu m) with high dislocation density [low (109 cm(-2))] grown by metal-organic vapor-phase epitaxy (sample A) and the other on thick GaN template (similar to 20 mu m ) with comparatively low dislocation density [high (108 cm(-2) )] by hydride vapor-phase epitaxy (sample B). In order to understand the mechanism of leakage current in LEDs, the correlation between current-voltage characteristics and etch pit density of LEDs was studied. (c) 2006 American Institute of Physics.

引用

页数：3

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