Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface

被引:65
作者
Liu, CH
Chuang, RW
Chang, SJ [1 ]
Su, YK
Wu, LW
Lin, CC
机构
[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan
[2] Nan Jeon Inst Technol, Dept Elect Engn, Yenshui 737, Taiwan
[3] S Epitaxy Corp, Hsinshi 744, Taiwan
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 112卷 / 01期
关键词
low temperature; GaN; MQW; LED;
D O I
10.1016/j.mseb.2004.05.003
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Mg-doped p-GaN epitaxial layers grown at different temperatures were prepared and characterized. It was found that we could achieve a higher hole concentration and a rough surface by reducing the growth temperature down to 800 C. In0.23Ga0.77N/GaN multiquantum well (MQW) light-emitting diodes (LEDs) with such a low 800 C-grown p-GaN cap layer were also fabricated. It was also found that one could lower the LED operation voltage from 3.68 to 3.36 V and enhance the 20 mA LED output power by the 800 C-grown p-GaN cap layer. However, it was also found the leakage current was larger and the lifetime was shorter for the LEDs with the 800 C-grown p-GaN cap layer. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:10 / 13
页数:4
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