Cross-sectional scanning tunneling microscopy

被引：34

作者：

Yu, ET

机构：

[1] Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla

来源：

CHEMICAL REVIEWS | 1997年 / 97卷 / 04期

关键词：

D O I：

10.1021/cr960084n

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

[No abstract available]

引用

页码：1017 / 1044

页数：28

共 137 条

[1] NANOMETER RESOLUTION IN LUMINESCENCE MICROSCOPY OF III-V HETEROSTRUCTURES [J].

ABRAHAM, DL ;

VEIDER, A ;

SCHONENBERGER, C ;

MEIER, HP ;

ARENT, DJ ;

ALVARADO, SF .

APPLIED PHYSICS LETTERS, 1990, 56 (16) :1564-1566

[2] LATERAL DOPANT PROFILING IN SEMICONDUCTORS BY FORCE MICROSCOPY USING CAPACITIVE DETECTION [J].

ABRAHAM, DW ;

WILLIAMS, C ;

SLINKMAN, J ;

WICKRAMASINGHE, HK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02) :703-706

[3]

ADACHI S, 1992, PHYSICAL PROPERTIES

[4] TERRACING AND STEP BUNCHING IN INTERFACES OF MOLECULAR-BEAM EPITAXY-GROWN (AL)GAAS MULTILAYERS [J].

ALBREKTSEN, O ;

MEIER, HP ;

ARENT, DJ ;

SALEMINK, HWM .

APPLIED PHYSICS LETTERS, 1993, 62 (17) :2105-2107

[5] TUNNELING MICROSCOPY AND SPECTROSCOPY OF MOLECULAR-BEAM EPITAXY GROWN GAAS-ALGAAS INTERFACES [J].

ALBREKTSEN, O ;

ARENT, DJ ;

MEIER, HP ;

SALEMINK, HWM .

APPLIED PHYSICS LETTERS, 1990, 57 (01) :31-33

[6] LUMINESCENCE IN SCANNING TUNNELING MICROSCOPY ON III-V NANOSTRUCTURES [J].

ALVARADO, SF ;

RENAUD, P ;

ABRAHAM, DL ;

SCHONENBERGER, C ;

ARENT, DJ ;

MEIER, HP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02) :409-413

[7]

[Anonymous], 1982, LANDOLT BORNSTEIN NU

[8] TUNNELLING FROM A MANY-PARTICLE POINT OF VIEW [J].

BARDEEN, J .

PHYSICAL REVIEW LETTERS, 1961, 6 (02) :57-&

[9]

BECHSTEDT F, 1988, SEMICONDUCTOR SURFAC, pCH3

[10] ATOMIC FORCE MICROSCOPE [J].

BINNIG, G ;

QUATE, CF ;

GERBER, C .

PHYSICAL REVIEW LETTERS, 1986, 56 (09) :930-933

← 1 2 3 4 5 6 7 8 9 10 →