Effect of annealing on ZnO thin films grown on (001) silicon substrate by low-pressure metalorganic chemical vapour deposition

被引：59

作者：

Zhang, YT ^{[1
]}

Du, GT

Yang, XT

Zhao, BJ

Ma, Y

Yang, TP

Ong, HC

Liu, DL

机构：

[1] Jilin Univ, Coll Electron Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China

[2] Chinese Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 06期

关键词：

D O I：

10.1088/0268-1242/19/6/017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ZnO thin films were deposited on (001) Si substrate by low-pressure metalorganic chemical vapour deposition. Thermal annealing was performed at 800 degreesC in air for an hour. The effects of annealing on the surface morphology, stoichiometric ratio, structural and optical properties of ZnO films were investigated using scanning electron microscopy, x-ray photoemission spectroscopy (XPS), x-ray diffraction, Raman spectra and photoluminescence spectra. The resistivity of ZnO film increased to 1.25 x 10(2) Omega cm after annealing. It was found that the quality of ZnO film could be improved through annealing.

引用

页码：755 / 758

页数：4

共 10 条

[1] ZnO diode fabricated by excimer-laser doping [J].