Time-resolved electroabsorption measurement of the electron velocity-field characteristic in GaN

被引：85

作者：

Wraback, M ^{[1
]}

Shen, H

Carrano, JC

Li, T

Campbell, JC

Schurman, MJ

Ferguson, IT

机构：

[1] USA, Res Lab, Sensors & Electron Devices Directorate, AMSRL SE EM, Adelphi, MD 20783 USA

[2] US Mil Acad, Photon Res Ctr, Dept Elect Engn & Comp Sci, W Point, NY 10996 USA

[3] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

[4] EMCORE Corp, Somerset, NJ 08873 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 09期

关键词：

D O I：

10.1063/1.125968

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A femtosecond optically detected time-of-flight technique that monitors the change in the electroabsorption associated with the transport of photogenerated carriers in a GaN p-i-n diode has been used to determine the room-temperature electron transit time and steady-state velocity as a function of electric field. The peak electron velocity of 1.9 x 10(7) cm/s, corresponding to a transit time of 2.5 ps, is attained at 225 kV/cm. The shape of the velocity-field characteristic is in qualitative agreement with theoretical predictions. (C) 2000 American Institute of Physics. [S0003-6951(00)01009-3].

引用

页码：1155 / 1157

页数：3

共 16 条

[1] Electron transport characteristics of GaN for high temperature device modeling [J].

Albrecht, JD ;

Wang, RP ;

Ruden, PP ;

Farahmand, M ;

Brennan, KF .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (09) :4777-4781

[2] Monte Carlo calculation of velocity-field characteristics of wurtzite GaN [J].

Bhapkar, UV ;

Shur, MS .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (04) :1649-1655

[3] Ballistic electron emission microscopy study of transport in GaN thin films [J].

Brazel, EG ;

Chin, MA ;

Narayanamurti, V ;

Kapolnek, D ;

Tarsa, EJ ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 1997, 70 (03) :330-332

[4] 0.12-mu m gate III-V nitride HFET's with high contact resistances [J].

Burm, J ;

Chu, K ;

Schaff, WJ ;

Eastman, LF ;

Khan, MA ;

Chen, QH ;

Yang, JW ;

Shur, MS .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (04) :141-143

[5] High-speed pin ultraviolet photodetectors fabricated on GaN [J].

Carrano, JC ;

Li, T ;

Brown, DL ;

Grudowski, PA ;

Eiting, CJ ;

Dupuis, RD ;

Campbell, JC .

ELECTRONICS LETTERS, 1998, 34 (18) :1779-1781

[6] Very high-speed ultraviolet photodetectors fabricated on GaN [J].

Carrano, JC ;

Li, T ;

Eiting, CJ ;

Dupuis, RD ;

Campbell, JC .

JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (03) :325-333

[7] Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN [J].

Carrano, JC ;

Li, T ;

Brown, DL ;

Grudowski, PA ;

Eiting, CJ ;

Dupuis, RD ;

Campbell, JC .

APPLIED PHYSICS LETTERS, 1998, 73 (17) :2405-2407

[8] Transient electron transport in wurtzite GaN, InN, and AlN [J].

Foutz, BE ;

O'Leary, SK ;

Shur, MS ;

Eastman, LF .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (11) :7727-7734

[9]

Khan MA, 1996, IEEE ELECTR DEVICE L, V17, P584, DOI 10.1109/55.545778

[10] ELECTRONIC TRANSPORT STUDIES OF BULK ZINCBLENDE AND WURTZITE PHASES OF GAN BASED ON AN ENSEMBLE MONTE-CARLO CALCULATION INCLUDING A FULL ZONE BAND-STRUCTURE [J].

KOLNIK, J ;

OGUZMAN, IH ;

BRENNAN, KF ;

WANG, RP ;

RUDEN, PP ;

WANG, Y .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (02) :1033-1038

← 1 2 →