Electronic traps in organic transport layers

被引：132

作者：

Schmechel, R ^{[1
]}

von Seggern, H ^{[1
]}

机构：

[1] Tech Univ Darmstadt, Inst Mat & Geowissensch, D-64287 Darmstadt, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2004年 / 201卷 / 06期

关键词：

D O I：

10.1002/pssa.200404343

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The knowledge about properties of electronic traps in organic semiconductors is one of the major keys for the understanding and optimization of charge transport in organic devices. In the present article the density of occupied states of the most prominent pristine small molecule systems and selected polymers are reported determined, by fractional thermally stimulated current and luminescence techniques. In order to distinguish between impurity and structurally based traps, model systems of doped as well as differently deposited layers were studied. In addition, the influence of detected traps on steady state I-V and dynamic time-of-flight characteristics are reported. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA. Weinheim.

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收藏

页码：1215 / 1235

页数：21

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