Double-dot charge transport in Si single-electron/hole transistors

被引：43

作者：

Rokhinson, LP ^{[1
]}

Guo, LJ ^{[1
]}

Chou, SY ^{[1
]}

Tsui, DC ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 12期

关键词：

D O I：

10.1063/1.126105

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied transport through ultrasmall Si quantum-dot transistors fabricated from siliconon-insulator wafers. At high temperatures, 4 < T < 100 K, the devices show single-electron or single-hole transport through the lithographically defined dot. At T < 4 K, current through the devices is characterized by multidot transport. From the analysis of the transport in samples with double-dot characteristics, we conclude that extra dots are formed inside the thermally grown gate oxide which surrounds the lithographically defined dot. (C) 2000 American Institute of Physics. [S0003-6951(00)03412-4].

引用

页码：1591 / 1593

页数：3

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