Room temperature Coulomb blockade and low temperature hopping transport in a multiple-dot-channel metal-oxide-semiconductor field-effect-transistor

被引：17

作者：

Hiramoto, T

Ishikuro, H

Fujii, T

Hashiguchi, G

Ikoma, T

机构：

[1] Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 106, Japan

[2] Univ Tokyo, VLSI Design & Educ Ctr, Bunkyo Ku, Tokyo 113, Japan

[3] Nippon Steel Corp Ltd, Elect Res Labs, Sagamihara, Kanagawa 229, Japan

[4] Texas Instruments Tsukuba Res & Dev Ctr Ltd, Tsukuba, Ibaraki 305, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1997年 / 36卷 / 6B期

关键词：

MOSFET; single electron tunneling; Coulomb blockade; coupled quantum dots; resonant tunneling; hopping conduction;

D O I：

10.1143/JJAP.36.4139

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the transport properties of an extremely narrow channel metal-oxide-semiconductor field-effect-transistor (MOSFET) fabricated by a novel anisotropic etching technique. The device shows clear Coulomb blockade oscillations at room temperature, while aperiodic sharp peaks are observed at low temperatures. Measurements of temperature dependence and magnetic field dependence reveal that the narrow channel of the MOSFET is separated into quantum dots and that not only the resonant tunneling transport but also the thermally activated hopping conduction plays an important role at low temperatures.

引用

页码：4139 / 4142

页数：4

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