On the origin of tunneling barriers in silicon single electron and single hole transistors

被引：67

作者：

Ishikuro, H

Hiramoto, T

机构：

[1] Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 1068558, Japan

[2] Univ Tokyo, VLSI Design & Educ Ctr, Bunkyo Ku, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 08期

关键词：

D O I：

10.1063/1.123464

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To clarify the channel potential profiles, Coulomb blockades of single electron and single hole tunneling in Si nanosize narrow channel metal-oxide-semiconductor field-effect transistors are intensively studied. Devices with both n(+) and p(+) source/drain contacts were fabricated on silicon-on-insulator substrates. Transport properties of a hole system as well as an electron system induced in the same channel were investigated. It is found from the experimental results that potential fluctuations in the channel act as tunnel barriers for both electrons and holes. Lateral quantum confinement effects or silicon oxide (SiOx) are thought to be the cause of tunnel barriers. (C) 1999 American Institute of Physics. [S0003-6951(99)03108- 3].

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页码：1126 / 1128

页数：3

相关论文

共 11 条

[1]

AubertonHerve AJ, 1997, IEICE T ELECTRON, VE80C, P358

[2] Observation of single electron-hole recombination and photon-pumped current in an asymmetric Si single-electron transistor [J].

Fujiwara, A ;

Takahashi, Y ;

Murase, K .

PHYSICAL REVIEW LETTERS, 1997, 78 (08) :1532-1535

[3] Fabrication of Si nanostructures for single electron device applications by anisotropic etching [J].

Hiramoto, T ;

Ishikuro, H ;

Saito, K ;

Fujii, T ;

Saraya, T ;

Hashiguchi, G ;

Ikoma, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (12B) :6664-6667

[4] Characterization of precisely width-controlled Si quantum wires fabricated on SOI substrates [J].

Hiramoto, T ;

Ishikuro, H ;

Fujii, T ;

Saraya, T ;

Hashiguchi, G ;

Ikoma, T .

PHYSICA B, 1996, 227 (1-4) :95-97

[5] Formation of two-dimensional electron and hole gases in undoped AlxGa1-xAs/GaAs heterostructures [J].

Hirayama, Y .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (01) :588-590

[6] Coulomb blockade oscillations at room temperature in a Si quantum wire metal-oxide-semiconductor field-effect transistor fabricated by anisotropic etching on a silicon-on-insulator substrate [J].

Ishikuro, H ;

Fujii, T ;

Saraya, T ;

Hashiguchi, G ;

Hiramoto, T ;

Ikoma, T .

APPLIED PHYSICS LETTERS, 1996, 68 (25) :3585-3587

[7] Quantum mechanical effects in the silicon quantum dot in a single-electron transistor [J].

Ishikuro, H ;

Hiramoto, T .

APPLIED PHYSICS LETTERS, 1997, 71 (25) :3691-3693

[8] SINGLE HOLE QUANTUM-DOT TRANSISTORS IN SILICON [J].

LEOBANDUNG, E ;

GUO, LJ ;

CHOU, SY .

APPLIED PHYSICS LETTERS, 1995, 67 (16) :2338-2340

[9] Single-electron transistors fabricated from a doped-Si film in a silicon-on-insulator substrate [J].

Sakamoto, T ;

Kawaura, H ;

Baba, T .

APPLIED PHYSICS LETTERS, 1998, 72 (07) :795-796

[10] FABRICATION TECHNIQUE FOR SI SINGLE-ELECTRON TRANSISTOR OPERATING AT ROOM-TEMPERATURE [J].

TAKAHASHI, Y ;

NAGASE, M ;

NAMATSU, H ;

KURIHARA, K ;

IWDATE, K ;

NAKAJIMA, K ;

HORIGUCHI, S ;

MURASE, K ;

TABE, M .

ELECTRONICS LETTERS, 1995, 31 (02) :136-137