PL dependence of ZnO films grown on Si with various buffer layers by RF magnetron sputtering

被引：8

作者：

Lin, CC ^{[1
]}

Chen, SY

Cheng, SY

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[2] Ind Technol Res Inst, Mat Res Labs, Chutung, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2004年 / 7卷 / 07期

关键词：

D O I：

10.1149/1.1736594

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Peculiar photoluminescence (PL) emission properties of ZnO films on Si buffered with SiO2 and Si3N4 were found. The ZnO films deposited on SiO2/Si substrate show two double peaks in the room-temperature PL spectra, one double (374 and 394 nm) in the ultraviolet region and the other double (495 and 605 nm) located in the visible region. If the ZnO film was grown on Si3N4/Si, a very strong UV along with invisible deep-level emission was detected because the Si3N4 can effectively reduce the defect formation of oxygen vacancies and Zn interstitials compared to ZnO on SiO2/Si and Si. (C) 2004 The Electrochemical Society.

引用

页码：J20 / J22

页数：3

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