Broadband moth-eye antireflection coatings fabricated by low-cost nanoimprinting

被引：169

作者：

Chen, Q. ^{[1
]}

Hubbard, G. ^{[2
]}

Shields, P. A. ^{[1
]}

Liu, C. ^{[1
]}

Allsopp, D. W. E. ^{[1
]}

Wang, W. N. ^{[1
]}

Abbott, S. ^{[2
]}

机构：

[1] Univ Bath, Dept Elect & Elect Engn, Bath BA2 7AY, Avon, England

[2] MacDermid Autotype Ltd, Wantage OX12 7BZ, England

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 26期

关键词：

antireflection coatings; elemental semiconductors; nanolithography; silicon; solar cells;

D O I：

10.1063/1.3171930

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Subwavelength scale antireflection moth-eye structures in silicon were fabricated by a wafer-scale nanoimprint technique and demonstrated an average reflection of 1% in the spectral range from 400 to 1000 nm at normal incidence. An excellent antireflection property out to large incident angles is shown with the average reflection below 8% at 60 degrees. Pyramid array gave an almost constant average reflection of about 10% for an incident angle up to 45 degrees and concave-wall column array produced an approximately linear relation between the average reflection and the incident angles. The technique is promising for improving conversion efficiencies of silicon solar cells.

引用

页数：3