Exchange biasing of the ferromagnetic semiconductor Ga1-xMnxAs

被引：51

作者：

Eid, KF ^{[1
]}

Stone, MB

Ku, KC

Maksimov, O

Schiffer, P

Samarth, N

Shih, TC

Palmstrom, CJ

机构：

[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

[2] Penn State Univ, Inst Mat Res, University Pk, PA 16802 USA

[3] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 09期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1787945

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the exchange coupling of a ferromagnetic semiconductor (Ga1-xMnxAs) with an overgrown antiferromagnet (MnO). Unlike most conventional exchange biased systems, the blocking temperature of the antiferromagnet (T-B=48+/-2 K) and the Curie temperature of the ferromagnet (T-C=55.1+/-0.2 K) are comparable. The resulting exchange bias manifests itself as a clear shift in the magnetization hysteresis loop when the bilayer is cooled in the presence of an applied magnetic field and an enhancement of the coercive field. (C) 2004 American Institute of Physics.

引用

页码：1556 / 1558

页数：3

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