Unoccupied surface states of the (3x2)-reconstructed 3C-SiC(001) surface -: art. no. 235317

被引：6

作者：

Benesch, C ^{[1
]}

Merz, H ^{[1
]}

Zacharias, H ^{[1
]}

机构：

[1] Univ Munster, Inst Phys, D-48149 Munster, Germany

来源：

PHYSICAL REVIEW B | 2002年 / 65卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.65.235317

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the two-domain (3x2)-reconstructed 3C-SiC(001) surface using angle-resolved inverse photoemission. Two unoccupied surface resonance bands at an energetic position of E-SR=2.4 eV and 4.1 eV, respectively, with respect to the valence band maximum (VBM) at the (Gamma) over bar point are clearly identified. Both surface resonances show a flat dispersion in (Gamma J) over bar- and (Gamma J') over bar -direction. We compare the experimentally determined electronic surface band structure with four models for the (3x2)-reconstruction of the 3C-SiC(001) surface discussed in literature. The model of the two-adlayer asymmetric silicon dimers yields a band structure which is in good agreement with the experimental observations.

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页数：8

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