Dielectric properties of (Pb, La)TiO3 thin films by multiple-cathode sputtering and its application to dynamic random access memory capacitors

被引：17

作者：

Maiwa, H ^{[1
]}

Ichinose, N ^{[1
]}

机构：

[1] WASEDA UNIV,SCH SCI & ENGN,DEPT MAT SCI & ENGN,SHINJUKU KU,TOKYO 169,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 9B期

关键词：

ferroelectric thin films; (Pb; La)TiO3; DRAM; multiple-cathode sputtering; diffuse phase transition;

D O I：

10.1143/JJAP.35.4976

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

(Pb, La)TiO3 (PLT) thin films were fabricated by multiple-cathode RF-magnetron sputtering. PLT films deposited on Pt/SiO2/Si at 460 degrees C had a perovskite structure with preferred orientation in the (111) plane, The diffuse phase transition behavior was observed for the deposited PLT thin films. Thickness dependence and La content dependence of the electrical properties of the deposited PLT thin films are discussed. The dielectric constant and leakage current of the 100-nm-thick PLT(La/Ti=0.28) thin films were 306 and 10(-7) A/cm(2) (at a field of 500 kV/cm). These results indicate that the PLT thin films fabricated by multiple cathode RF magnetron sputtering are suitable for dynamic random access memory (DRAM) applications.

引用

页码：4976 / 4979

页数：4

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