Band-gap shrinkage in n-type-doped CdO probed by photoemission spectroscopy

被引：71

作者：

Dou, Y

Fishlock, T

Egdell, RG

Law, DSL

Beamson, G

机构：

[1] UNIV OXFORD,INORGAN CHEM LAB,OXFORD OX1 3QR,ENGLAND

[2] DARESBURY LAB,RES UNIT SURFACES TRANSFORMS & INTERFACES,WARRINGTON,CHESHIRE,ENGLAND

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 20期

关键词：

SEMICONDUCTORS; SURFACE;

D O I：

10.1103/PhysRevB.55.R13381

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of n-type doping CdO with In or Y has been investigated by high-resolution ultraviolet and x-ray photoemission spectroscopy. It is found that core levels and valence band features suffer a shift to high binding energy due to doping. However this shift is less than the change in the width of the occupied conduction band. This provides a direct measurement of band gap shrinkage as a result of doping in an oxide semiconductor.

引用

页码：13381 / 13384

页数：4

共 18 条

[1] HEAVILY DOPED SEMICONDUCTORS AND DEVICES [J].

ABRAM, RA ;

REES, GJ ;

WILSON, BLH .

ADVANCES IN PHYSICS, 1978, 27 (06) :799-892

[2] BAND-GAP NARROWING IN HEAVILY DOPED MANY-VALLEY SEMICONDUCTORS [J].

BERGGREN, KF ;

SERNELIUS, BE .

PHYSICAL REVIEW B, 1981, 24 (04) :1971-1986

[3]

BOETTGER JC, 1982, PHYS REV B, V27, P1359

[4] ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].

BURSTEIN, E .

PHYSICAL REVIEW, 1954, 93 (03) :632-633

[5] N-type doping in Cd2SnO4: A study by EELS and photoemission [J].

Dou, Y ;

Egdell, RG .

PHYSICAL REVIEW B, 1996, 53 (23) :15405-15408

[6]

FINKENRATH H, 1967, Z ANGEW PHYSIK, V23, P323

[7] UBER DEN EINFLUSS FREIER ELEKTRONEN AUF DIE OPTISCHE EIGENABSORPTION VON KADMIUMOXYD [J].

FINKENRATH, H .

ZEITSCHRIFT FUR PHYSIK, 1960, 159 (01) :112-124

[8]

FINKENRATH H, 1982, PHYSICS 2 6 1 7 COMP, V17, P162

[9] BAND-GAP WIDENING IN HEAVILY SN-DOPED IN2O3 [J].

HAMBERG, I ;

GRANQVIST, CG ;

BERGGREN, KF ;

SERNELIUS, BE ;

ENGSTROM, L .

PHYSICAL REVIEW B, 1984, 30 (06) :3240-3249

[10]

Ibach H., 2013, Electron Energy Loss Spectroscopy and Surface Vibrations

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