Formation mechanism of preferential c-axis oriented ZnO thin films grown on p-Si substrates

被引：22

作者：

Lee, HS

Lee, JY

Kim, TW ^{[1
]}

机构：

[1] Hanyang Univ, Adv Semicond Res Ctr, Div Elect & Comp Engn, Seoul 133791, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[3] Korea Inst Sci & Technol, Nano Res Ctr, Seoul 130650, South Korea

来源：

JOURNAL OF MATERIALS SCIENCE | 2004年 / 39卷 / 10期

关键词：

Polymer; Thin Film; Formation Mechanism;

D O I：

10.1023/B:JMSC.0000026968.24617.f6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The formation mechanism of preferential c-axis oriented ZnO thin films grown on Si substrates using radio-frequency magnetron sputtering method, was studied. Auger electron spectroscopy measurements were carried out to characterize the composition of the ZnO/Si heterostructures. The microstructural properties of the ZnO/p-Si (100) heterostructures were investigated using transmission electron microscopy. A possible formation of the c-axis oriented ZnO thin films was suggested on the basis of the experimental results.

引用

收藏

页码：3525 / 3528

页数：4

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