Solid-state lighting - Lamps, chips, and materials for tomorrow

被引:266
作者
Tsao, JY [1 ]
机构
[1] Sandia Natl Labs, Albuquerque, NM 87185 USA
来源
IEEE CIRCUITS & DEVICES | 2004年 / 20卷 / 03期
关键词
D O I
10.1109/MCD.2004.1304539
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Solid-state lighting technology based on inorganic light-emitting diodes (SSL-LEDs) is a rapidly advancing technology set to enter general illumination applications. Key for this technology to fulfill its promise for general illumination is a focus on the constraints imposed by some of the simplest but most important lamp, chip, and materials design choices. Quantifying these constraints depends on physical models and assumptions about the relationships between design and performance. These constraints not only provide interim guidance to lamp, chip, and materials technologists, but also stimulate development of improved physical models and assumptions by semiconductor scientists.
引用
收藏
页码:28 / 37
页数:10
相关论文
共 33 条
[1]   Low-dislocation-density GaN from a single growth on a textured substrate [J].
Ashby, CIH ;
Mitchell, CC ;
Han, J ;
Missert, NA ;
Provencio, PP ;
Follstaedt, DM ;
Peake, GM ;
Griego, L .
APPLIED PHYSICS LETTERS, 2000, 77 (20) :3233-3235
[2]   The promise and challenge of solid-state lighting [J].
Bergh, A ;
Craford, G ;
Duggal, A ;
Haitz, R .
PHYSICS TODAY, 2001, 54 (12) :42-47
[3]  
CARSLAW HS, 1959, CONDUCTION HEAT SOLI, P217
[4]  
DIXON R, 2000, COMPOUND SEMICON JAN, V6, P70
[5]   Modeling the effect of dislocations on the minority carrier diffusion length of a semiconductor [J].
Donolato, C .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (05) :2656-2664
[6]   BLUE LEDS, UV PHOTODIODES AND HIGH-TEMPERATURE RECTIFIERS IN 6H-SIC [J].
EDMOND, JA ;
KONG, HS ;
CARTER, CH .
PHYSICA B-CONDENSED MATTER, 1993, 185 (1-4) :453-460
[7]   Characteristics of InGaN/AlGaN light-emitting diodes on sapphire substrates [J].
Egawa, T ;
Jimbo, T ;
Umeno, M .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (11) :5816-5821
[8]   Changes in electrical characteristics associated with degradation of InGaN blue light-emitting diodes [J].
Fang, ZQ ;
Reynolds, DC ;
Look, DC .
JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (04) :448-451
[9]  
GEE JM, 2001, COMMUNICATION JUN
[10]   High-power VCSEL's:: Single devices and densely packed 2-D-arrays [J].
Grabherr, M ;
Miller, M ;
Jäger, R ;
Michalzik, R ;
Martin, U ;
Unold, HJ ;
Ebeling, KJ .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1999, 5 (03) :495-502