Changes in electrical characteristics associated with degradation of InGaN blue light-emitting diodes

被引：28

作者：

Fang, ZQ ^{[1
]}

Reynolds, DC ^{[1
]}

Look, DC ^{[1
]}

机构：

[1] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2000年 / 29卷 / 04期

关键词：

InGaN blue LEDs; early degradation; reverse I-V characteristics; threading dislocations;

D O I：

10.1007/s11664-000-0159-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Because of the high concentration of threading dislocations, the reverse current-voltage (I-V) characteristics for either homo- or heterojunctions made on GaN-based materials grown on sapphire often show a strong electric field dependence (called a soft breakdown characteristic), which can be described by a power law I = V-n, with n between 4 to 5. We find a significant increase of reverse currents associated with the early degradation of emission in InGaN blue single-quantum-well light-emitting diodes (LEDs) subjected to aging tests (injected current of 70 mA over a total time of about 300 h). The formation of dislocations might be due to the relaxation of strain in the thin InGaN active layer during the aging tests.

引用

页码：448 / 451

页数：4

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