Analysis of dependence of electroluminescence efficiency of AIInGaN LED heterostructures on pumping

被引：66

作者：

Rozhansky, I. V. ^{[1
]}

Zakheim, D. A. ^{[1
]}

机构：

[1] RAS, Ioffe Physicotech Inst, Polytekhnicheskaya 26, St Petersburg 194021, Russia

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 | 2006年 / 3卷 / 06期

关键词：

D O I：

10.1002/pssc.200565366

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The work is devoted to explanation of the decrease of external quantum efficiency (QE) with increase of pumping density typically observed for AlInGaN heterostrucures. It is shown as a result of numerical modeling that while the increase of QE at low pumping density is due to the competition between radiative and non-radiative recombination, the decrease of QE at large pumping density is caused by decrease of injection efficiency for the holes into the active area. A modified LED heterostructure is suggested, for which the effect of QE decreasing is not expected. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2160 / 2164

页数：5

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