Glassy mAS2S3•nAS2Se3 photoresist films for interference laser lithography

被引：31

作者：

Arsh, A

Klebanov, M

Lyubin, V

Shapiro, L

Feigel, A

Veinger, M

Sfez, B

机构：

[1] Ben Gurion Univ Negev, Dept Phys, IL-84105 Beer Sheva, Israel

[2] Ben Gurion Univ Negev, Dept Chem, IL-84105 Beer Sheva, Israel

[3] NRC Soreq, ElectroOpt Div, IL-81800 Yavne, Israel

来源：

OPTICAL MATERIALS | 2004年 / 26卷 / 03期

关键词：

chalcogenide glassy films; interference laser lithography; spectra of refractive index; photonic crystals;

D O I：

10.1016/j.optmat.2003.12.013

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

Spectra of refractive index and selective dissolution of several glassy mAs(2)S(3)(.)nAs(2)Se(3) films are studied. These results permitted to select efficient photoresist compositions for interference laser lithography, performed with Ar+-, He-Ne- and Nd:YAG-laser beams, and to fabricate the two- and three-dimensional photonic crystals. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：301 / 304

页数：4

共 15 条

[1]

INORGANIC RESIST FOR DRY PROCESSING AND DOPANT APPLICATIONS [J].