Many-body effects on excitons properties in GaN/AlGaN quantum wells

被引：32

作者：

Traetta, G ^{[1
]}

Cingolani, R

Di Carlo, A

Della Sala, F

Lugli, P

机构：

[1] Univ Lecce, INFM, Dipartimento Ingn Innovaz, I-73100 Lecce, Italy

[2] Univ Roma Tor Vergata, INFM, Dipartimento Ingn Elettron, I-00133 Rome, Italy

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 08期

关键词：

D O I：

10.1063/1.125932

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The many-body effects on excitons properties in GaN/AlGaN quantum wells are theoretically investigated by using a Green's function model and the electron and hole wave functions calculated either in the envelope function approximation or in the frame of a self-consistent tight-binding model. We show that the built-in field induced by the piezoelectric and spontaneous polarization charge causes a reduction of the exciton binding energy and of the absorption coefficient well below the values expected for the quantum well with flat band. At high carrier concentrations, the many-body screening prevails over the screening of the built-in electric field, causing complete exciton bleaching at typical densities of the order of 10(12) cm(-2). (C) 2000 American Institute of Physics. [S0003-6951(00)04004-3].

引用

页码：1042 / 1044

页数：3

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