Optical properties of SrSe thin films grown by molecular beam epitaxy

Absorption, reflection and Raman scattering measurements have been carried out for the optical properties of a SrSe thin film grown by molecular beam epitaxy on a BaF2 (111) substrate. The film quality and lattice constant have been assessed by x-ray diffraction, where the good quality of the SrSe thin film is evident in a full width at half maximum value of 310 arcsec. Temperature-dependent indirect band gaps are obtained with the aid of temperature-dependent absorption measurements from 16 to 300 K on the SrSe thin film. By fitting the far-infrared reflection spectra, transverse optical phonon reflection bands in the binary SrSe thin film have been assigned, which are further verified by temperature-dependent Raman scattering measurements. (C) 2002 American Institute of Physics.