Orthogonal self-assembly of carbon nanotube crossbar architectures by simultaneous graphoepitaxy and field-directed growth

被引：76

作者：

Ismach, Ariel ^{[1
]}

Joselevich, Ernesto ^{[1
]}

机构：

[1] Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, Israel

来源：

NANO LETTERS | 2006年 / 6卷 / 08期

关键词：

D O I：

10.1021/nl0610026

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Crossbar arrays of single-wall carbon nanotubes are produced spontaneously in a single step of chemical vapor deposition by simultaneous graphoepitaxy along faceted nanosteps and field-directed growth, perpendicular to each other. The two alignment mechanisms take place selectively on miscut C-plane sapphire and patterned amorphous SiO2 islands, respectively, without mutual interference, producing dense nanotube grids, with up to 12 junctions per square micrometer. This one-step method of orthogonal self-assembly may open up new possibilities for nanotube circuit integration.

引用

页码：1706 / 1710

页数：5

共 43 条

[1] Aligned growth of isolated single-walled carbon nanotubes programmed by atomic arrangement of substrate surface [J].