Carrier dynamics in porous silicon studied with a near-field heterodyne transient grating method

被引：8

作者：

Yamaguchi, Masahiro

Katayama, Kenji

Shen, Qing

Toyoda, Taro

Sawada, Tsuguo

机构：

[1] MIT, Dept Chem, Cambridge, MA 02139 USA

[2] Univ Tokyo, Dept Adv Mat Sci, Grad Sch Frontier Sci, Kashiwa, Chiba 2778561, Japan

[3] Univ Electrocommun, Dept Appl Phys & Chem, Chofu, Tokyo 1828585, Japan

[4] Univ Electrocommun, Course Coherent Opt Sci, Chofu, Tokyo 1828585, Japan

[5] Tokyo Univ Agr & Technol, Dept Chem Syst Engn, Koganei, Tokyo 1848588, Japan

来源：

CHEMICAL PHYSICS LETTERS | 2006年 / 427卷 / 1-3期

关键词：

D O I：

10.1016/j.cplett.2006.06.041

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The dynamics of excited carriers in porous silicon were investigated using the near-field heterodyne transient grating method, and the fundamental processes related to light emission were determined. The processes include trapping to surface states and two-body recombination of excited carriers, with trapping being the dominant source of light emission. Since nonlinear processes, namely two-body recombination, are included, it is necessary to measure the pump intensity dependence of the transient responses and to analyze them with a nonlinear differential equation in order to obtain accurate decay times. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：192 / 196

页数：5

共 20 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].