Local structure and conduction mechanism in amorphous In-Ga-Zn-O films

被引：61

作者：

Cho, Deok-Yong ^{[1
,3
]}

Song, Jaewon ^{[1
,3
]}

Na, Kwang Duk ^{[1
,3
]}

Hwang, Cheol Seong ^{[1
,3
]}

Jeong, Jong Han ^{[4
]}

Jeong, Jae Kyeong ^{[2
]}

Mo, Yeon-Gon ^{[4
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151742, South Korea

[2] Inha Univ, Dept Mat Sci & Engn, Inchon 402751, South Korea

[3] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea

[4] Samsung SDI Co Ltd, Corporate R&D Ctr, Yongin 449902, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 11期

关键词：

amorphous semiconductors; band structure; bond lengths; fine structure; gallium compounds; hopping conduction; indium compounds; localised states; semiconductor thin films; ternary semiconductors; X-ray absorption spectra; OXIDE SEMICONDUCTORS; CARRIER TRANSPORT;

D O I：

10.1063/1.3103323

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The local structures of amorphous In-Ga-Zn-O (InGaZnO4 and In2Ga2ZnO7) films were examined by x-ray absorption spectroscopy and fine structure analysis. The local metal-oxygen coordination in both films indicated bipyramidal GaO5, ZnO5, and trigonal InO6 clusters. Further analyses showed splitting of the Zn-O bond length suggesting distortion of the ZnO5 cluster, which evidenced the existence of localized holes in the Zn atoms. In combination with the abundance of In 5s electrons, this shows that the In-Zn hopping interactions contribute to electrical conduction.

引用

页数：3

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