Absence of Stark shift in strained Si1-xGex/Si type-I quantum wells

被引:32
作者
Miyake, Y [1 ]
Kim, JY [1 ]
Shiraki, Y [1 ]
Fukatsu, S [1 ]
机构
[1] UNIV TOKYO, ADV SCI & TECHNOL RES CTR, MEGURO KU, TOKYO 153, JAPAN
关键词
D O I
10.1063/1.115596
中图分类号
O59 [应用物理学];
学科分类号
摘要
Excitonic photoluminescence in a transverse electric field has been studied in strained Si1-xGex/Si type-I quantum wells (QWs) in the weak field regime. With increasing electric field, a steady blue-shift of the free exciton emission energies has been observed, thereby suppressing the anticipated downward shift due to a quantum confined Stark effect. It is revealed that a field-driven decrease of the exciton binding energies gives a good account of the experimental blue-shift for a wide range of well widths, which is also in good agreement with variational calculations. We also find that the extremely small conduction band offset characteristic of stained Si1-xGex/Si type-I QWs is responsible for the absence of the Stark red-shift and the mixed dimensionality. (C) 1996 American Institute of Physics.
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页码:2097 / 2099
页数:3
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