Origin of room temperature ferromagnetism in ZnO:Cu films

被引：119

作者：

Herng, T. S.

Lau, S. P.

Yu, S. F.

Yang, H. Y.

Ji, X. H.

Chen, J. S.

Yasui, N.

Inaba, H.

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Data Storage Inst, Singapore 117608, Singapore

[3] Hitachi Ltd, Cent Res Lab, Totsuka Ku, Yokohama, Kanagawa 2440817, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 08期

关键词：

D O I：

10.1063/1.2190711

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Copper-doped ZnO (ZnO:Cu) films were prepared on silicon substrates by filtered cathodic vacuum arc technique at room temperature using a Zn target containing 5 at. % of Cu. Room temperature ferromagnetism was observed in the ZnO:Cu films with saturation magnetization of 0.037 mu(B)/Cu atom. The origin of the ferromagnetism in ZnO:Cu was mainly due to Cu ions substituted into the ZnO lattice. X-ray diffraction, x-ray photoelectron spectroscopy, and transmission electron microscopy revealed that no ferromagnetic-related secondary phase could be detected in ZnO:Cu. (C) 2006 American Institute of Physics.

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页数：3

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