The effect of post-deposition cooling rate on the orientation of piezoelectric ( Pb0.92Sr0.08)( Zr0.65Ti0.35) O3 thin films deposited by RF magnetron sputtering

Strontium-doped lead zirconate titanate (PSZT) has been reported for its high piezoelectric and ferroelectric properties. The deposition of piezoelectric thin films ( from a few nanometres to a few microns) is an essential part of microsystem devices for sensing and actuating. For PSZT to exhibit pronounced piezoelectric behaviour it must have a crystalline grain structure ( perovskite orientation). This paper is a study of the deposition of PSZT thin films by RF magnetron sputtering and the effect of cooling rate, after deposition at temperatures between 500 degrees C and 700 degrees C. X-ray diffraction (XRD) results are used to show how a cooling rate of 5 degrees C min(-1) increases the degree of perovskite orientation in sputtered films, when compared to a cooling rate of 15 degrees C min-1. X-ray photoelectron spectroscopy and energy dispersive x-ray analyses were used to determine the composition of the thin films. Results from deposition on silicon membranes and the position of diffraction peak patterns in XRD results are used to demonstrate low stress in the deposited films. Atomic force microscope imaging is used to show the crystalline nature of the PSZT thin films.