Enhancing near-infrared avalanche photodiode performance by femtosecond laser microstructuring

被引：57

作者：

Myers, Richard A.

Farrell, Richard

Karger, Arieh M.

Carey, James E.

Mazur, Eric

机构：

[1] Radiat Monitoring Devices Inc, Watertown, MA 02472 USA

[2] Dept Phys, Cambridge, MA 02138 USA

[3] Div Engn & Appl Sci, Cambridge, MA 02138 USA

来源：

APPLIED OPTICS | 2006年 / 45卷 / 35期

关键词：

D O I：

10.1364/AO.45.008825

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A processing technique using femtosecond laser pulses to microstructure the surface of a silicon avalanche photodiode (APD) has been used to enhance its near-infrared (near-IR) response. Experiments were performed on a series of APDs and APD arrays using various structuring parameters and post-structuring annealing sequences. Following thermal annealing, we were able to fabricate APD arrays with quantum efficiencies as high as 58% at 1064 nm without degradation of their noise or gain performance. Experimental results provided evidence to suggest that the improvement in charge collection is a result of increased absorption in the near-IR. (c) 2006 Optical Society of America.

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收藏

页码：8825 / 8831

页数：7

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