Fonnation of epitaxial β-FeSi2 nanodots array on strained Si/Si0.8Ge0.2(001) substrate

被引：7

作者：

Chen, HC ^{[1
]}

Liao, KF ^{[1
]}

Lee, SW ^{[1
]}

Cheng, SL ^{[1
]}

Chen, LJ ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Sect 2, Hsinchu 200, Taiwan

来源：

THIN SOLID FILMS | 2004年 / 461卷 / 01期

关键词：

beta-FeSi2; nanodot; strained Si;

D O I：

10.1016/j.tsf.2004.02.058

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial beta-FeSi2 nanodots were grown on strained Si/Si0.8Ge0.2 (001) substrates by solid phase epitaxy (SPE) method. High quality beta-FeSi2 nanodots were grown at 800 degreesC by employing strained Si/Si0.8Ge0.2 substrates, owing to a decrease of the in-plane lattice mismatch between the lattice parameters of the beta-FeSi2 [001]and [010] directions and that of Si substrate. Ordered beta-FeSi2 arrays along (110) direction were observed to form on surfaces of strained Si/Si0.8Ge0.2 substrate. It is shown that dislocation slip originated from compositionally graded Si1-xGex layers can produce local surface-strain and local thickness variation. The surface features are used for the fabrication of epitaxial beta-FeSi2 nanostructures on strained Si/Si0.8Ge0.2 substrate. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：44 / 47

页数：4

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