Nanoscale structuring by misfit dislocations in Si1-xGex/Si: Epitaxial systems

被引：171

作者：

Shiryaev, SY ^{[1
]}

Jensen, F ^{[1
]}

Hansen, JL ^{[1
]}

Petersen, JW ^{[1
]}

Larsen, AN ^{[1
]}

机构：

[1] TECH UNIV DENMARK,MIKROELEKTRON CTR,DK-2800 LYNGBY,DENMARK

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 78卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.78.503

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

New capabilities of misfit dislocations for spatial manipulation of islands in Si1-xGex/Si heteroepitaxial systems have been elucidated. Formation of highly ordered Ge-island patterns on substrates prestructured by slip bands of misfit dislocations is revealed. The major sources leading to the ordering are identified to be dislocation strain fields at the surface and modifications of the nearsurface-layer morphology induced by dislocation slip.

引用

页码：503 / 506

页数：4

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