Cross-plane lattice and electronic thermal conductivities of ErAs:InGaAs/InGaAlAs superlattices

被引:78
作者
Kim, Woochul [1 ]
Singer, Suzanne L.
Majumdar, Arun
Vashaee, Daryoosh
Bian, Zhixi
Shakouri, Ali
Zeng, Gehong
Bowers, John E.
Zide, Joshua M. O.
Gossard, Arthur C.
机构
[1] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA
[2] Univ Calif Santa Cruz, Dept Elect Engn, Santa Cruz, CA 95064 USA
[3] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[4] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
关键词
D O I
10.1063/1.2207829
中图分类号
O59 [应用物理学];
学科分类号
摘要
We studied the cross-plane lattice and electronic thermal conductivities of superlattices made of InGaAlAs and InGaAs films, with the latter containing embedded ErAs nanoparticles (denoted as ErAs:InGaAs). Measurements of total thermal conductivity at four doping levels and a theoretical analysis were used to estimate the cross-plane electronic thermal conductivity of the superlattices. The results show that the lattice and electronic thermal conductivities have marginal dependence on doping levels. This suggests that there is lateral conservation of electronic momentum during thermionic emission in the superlattices, which limits the fraction of available electrons for thermionic emission, thereby affecting the performance of thermoelectric devices. (c) 2006 American Institute of Physics.
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